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SSG6680 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SSG6680
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  5 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG6680 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSG
6680
11.5A, 30V,RDS(ON) 11m
N-Channel Enhancement Mode Power Mos.FET
Ω
Description
The SSG
6680 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Features
*
Surface Mount Package
*
High Vgs Max. Rating Voltage
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
3
3
Parameter
Symbol
Ratings
Unit
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient
Max.
A
V
V
A
A
ID@TA=70
/W
C
W/ C
C
W
VDS
VGS
ID@TA=25
IDM
PD@TA=25
Tj, Tstg
Rthj-a
30
±25
50
11.5
9.5
2.5
0.02
-55~+150
50
3
* Low On-Resistance
o
o
o
C
o
C
o
C
o
Absolute Maximum Ratings
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
0.25
Dimensions in millimeters
6.20
5.80
1.27Typ.
0.35
0.49
4.80
5.00
0
0.100.25
1.35
1.75
0.40
0.90
0.19
0.25
3.80
4.00
0.375 REF
o
8
o
45
o
S
S
S
G
D
D
D
D
66
80SC
Date Code
1
5
7
8
2
3
4
6
SOP-8
industrial surface mount application and suited for low
The SOP-8 is universally preferred for all commercial
voltage applications such as DC/DC converters.
01-Jun-2002 Rev. A
Page 1 of
5
S
D
G
RoHS Compliant Product


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