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SSG9975 Datasheet(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9975 Datasheet(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH |
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4 / 4 page ![]() http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 tage does not sag below the minimum dropout voltage during the load V higher than Vout in order for the device to Description GND Typically a large storage capacitor is connected from this pin to ground to insure that the input 1.3V or open= output enable. NC Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Elektronische Bauelemente SSG9975 7.6A, 60V,RDS(ON) 21m N-Channel Enhancement Mode Power Mos.FET Ω |
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