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SSL40N03 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSL40N03
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  5 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSL40N03 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Notes: Pulse width limited by safe operating area.
1.
2.Pulse width 300us, dutycycle 2%.
≦
≦
17
3
10
7.2
60
22.5
10
800
380
133
nC
nS
pF
VGS=0V
VDS=25V
f=1.0MHz
VDD=15V
ID=20A
VGS=10V
RG=3.3
RD=0.75
Ω
Ω
ID=20A
VDS=24V
VGS= 4.5V
_
_
_
_
_
_
_
_
_
_
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17
24
m
26
Ω
VGS=10V, ID=20A
VGS=4.5V, ID=16A
_
_
S
VDS=10V, ID=20A
_
_
22
14
30
0.037
1.0
3.0
100
25
250
±
V
V/
Reference to 25C, ID=1mA
o
oC
V
nA
uA
uA
VGS=0V, ID=250uA
VGS= 20V
±
VDS=30V,VGS=0
VDS=24V,VGS=0
VDS=VGS, ID=250uA
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Total Gate Charge
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-Source On-Resistance
Forward Transconductance
Gfs
2
2
RDS(ON)
BVDSS
BVDS/ Tj
IDSS
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current(Tj=150 )
VGS(th)
IGSS
oC
oC
ttp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 5
h
Elektronische Bauelemente
SSL40N03
40A, 30V,RDS(ON)17 m
N-Channel Enhancement Mode Power Mos.FET
Ω
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Continuous Source Current(Body Diode)
IS
_
4
169
4
3
3
0
0
Pulsed Source Current(Body Diode)
_
ISM
A
A
VD=VG=0V,VS=1. V
VSD
_
_
IS=
A, VGS=0V.Tj=25C
V
1.
o
2
1
_
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