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SSM9973 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSM9973
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSM9973 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSM9973
3.9A, 60V,RDS(ON) 80m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
60
0.06
1.0
3.0
100
1
25
80
100
8
2
4
8
4
20
6
700
80
50
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=25V
f=1.0MHz
VDD=30V
ID=1A
VGS=10V
RG=3.3
RD=30
Ω
Ω
ID=3.9A
VDS=48V
VGS=4.5V
VGS=10V, ID=3.9A
VGS=4.5V, ID=2A
VGS=0V, ID=250uA
VGS= 20V
±
VDS=60V,VGS=0
VDS=48V,VGS=0
VDS=VGS, ID=250uA
Reference to 25 ,ID=1mA
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13
Source-Drain Diode
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Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
VDS
Trr
Qrr
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1120
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IS=3.9A, VGS=0V.
Is=3.9A, VGS=0V
V
ns
nC
1.2
28
35
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
2
3.Surface mounted on 1 inch2 copper pad of FR4 board; 135
when mounted on min. copper pad.
dl/dt=100A/us
°
C/W
Forward Transconductance
Gfs
S
3.5
VDS=10V, ID=3.9A
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01-Jun-2002 Rev. A
Page 2 of 4
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