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SST6301K Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SST6301K
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SST6301K Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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30
0.06
0.5
1.5
10
1
100
1
2
1
0.5
0.5
±
V
V/
V
uA
uA
uA
nC
nS
pF
Ω
VGS=0V
VDS=25V
f=1.0MHz
VDD= 30V
ID= 600mA
VGS=10V
RG=3.3
RD=52
Ω
Ω
ID=600mA
VDS=50V
VGS=4.5V
VGS=10V, ID=500mA
VGS=4.5V, ID=400mA
VGS=0V, ID= 250uA
VGS= 16V
±
VDS=30V,VGS=0
VDS= 24V,VGS=0
VDS=VGS, ID=250uA
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
mS
600
VDS=10V, ID=600mA
_
_
1.6
C
o
12
10
56
29
32
8
6
__
_
_
50
_
_
_
_
Reference to 25 ,ID= 1mA
C
o
/ Tj
Total Gate Charge
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Forward Transconductance
Gfs
C
o
C
o
2
2
3
_
_
VGS=2.7V, ID=200mA
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VSD
_
_
IS=1.2A, VGS=0V.
2
3.Surface mounted on 1 in copper pad of FR4 board; 180
V
1.
2
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
O
C/W when mounted on min. copper pad.
2
Elektronische Bauelemente
SST6301K
640mA, 30V,RDS(ON) 1.0
N-Channel Enhancement Mode Power Mos.FET
Ω
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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