STT6405 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

STT6405

-5.0 A, -30 V, RDS(ON) 50 mΩ

P-Channel Enhancement Mode Mos.FET

01-June-2005 Rev. A

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-30

VGS = 0, ID= -250 uA

Gate Threshold Voltage

VGS(th)

-1.0

-3.0

VDS = VGS, ID= -250 uA

Gate-Source Leakage Current

IGSS

±100

VGS = ±20 V

Drain-Source Leakage Current (Tj=25℃)

-1

VDS = -30 V, VGS = 0

Drain-Source Leakage Current (Tj=55℃)

IDSS

-5

VDS = -24 V, VGS = 0

VGS = -10 V, ID = -5.0 A

Static Drain-Source On-Resistance

RDS(ON)

mΩ

VGS = -4.5 V, ID = -4.0 A

Forward Transconductance

gfs

8.6

VDS = -5V, ID = -5.0A

Total Gate Charge

14.7

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Charge

Qgd

3.8

ID = -5.0 A

VDS = -15 V

VGS = -10 V

Turn-on Delay Time

Td(on)

8.3

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDS = -15 V

VGS = -10 V

RG = 3 Ω

RL = 3 Ω

Input Capacitance

Ciss

700 840

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

VGS = 0 V

VDS = -15 V

f = 1.0 MHz

Gate Resistance

Ω

f=1.0 MHz

SOURCE-DRAIN DIODE

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Forward On Voltage

VSD

-1.0

IS = -1.0 A, VGS= -0 V

Reverse Recovery Time

Trr

23.5

Reverse Recovery Charge

Qrr

13.4

IS = -5.0A, VGS=0V, dl/dt=

100A/us

Notes:

1. Pulse width limited by Max. junction temperature.

2. Pulse width≦300us, duty cycle≦2%.

3. Surface mounted on 1 in

2 copper pad of FR4 board; 156℃/W when mounted on Min. copper pad.

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