STT6601 datasheet(2/6 Pages) SECOS

2 / 6 page

Elektronische Bauelemente

STT6601

(N-Ch) 2.8 A, 30 V, RDS(ON) 68 m

(P-Ch) -2.8 A, -30 V, RDS(ON) 120 m

N & P-Channel Enhancement Mode Mos.FET

01-June-2007 Rev. C

Page 2 of 6

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

N-Ch

VGS=0, ID=250uA

Drain-Source Breakdown

Voltage

P-Ch

BVDSS

-30

VGS=0, ID=-250uA

N-Ch

0.8

1.6

VDS=VGS, ID=250uA

Gate Threshold Voltage

P-Ch

VGS(th)

-0.4

-1.0

VDS=VGS, ID=-250uA

N-Ch

4.6

VDS=4.5V, ID=-6.0A

Forward Transconductance

P-Ch

gfs

VDS=-10V, ID=-2.8A

N-Ch

±100

VDS= 0 V, VGS=±12 V

Gate Leakage Current

P-Ch

IGSS

±100

VDS= 0 V, VGS=±12 V

N-Ch

VDS=24 V, VGS=0 V

P-Ch

-1

VDS=-24V, VGS=0 V

N-Ch

VDS=24V, VGS=0 V, TJ=55℃

Zero Gate Voltage Drain Current

(Tj=25 )

℃

P-Ch

IDSS

-10

VDS=-24V, VGS=0 V, TJ=55℃

N-Ch

VDS ≧ 5V, VGS=10 V

On-State Drain Current

P-Ch

ID(on)

-6

VDS ≦ -5V, VGS= -10 V

N-Ch

0.048

0.068

VGS=10V, ID=2.8A

P-Ch

0.077

0.105

VGS=-10V, ID=-2.8A

N-Ch

0.054

0.078

VGS=4.5V, ID=2.3A

P-Ch

0.092

0.120

VGS=-4.5V, ID=-2.5A

N-Ch

0.079

0.108

VGS=2.5V, ID=1.5A

Drain-Source On-Resistance

P-Ch

RDS(ON)

0.118

0.150

Ω

VGS=-2.5V, ID=-1.5A

N-Ch

4.2

Total Gate Charge

P-Ch

5.8

N-Ch

0.6

Gate-Source Charge

P-Ch

Qgs

0.8

N-Ch

1.5

Gate-Drain Charge

P-Ch

Qgd

1.5

N-Channel

VDS=15V, VGS=4.5V , ID=2.0A

P-Channel

VDS=-15V, VGS=-4.5V ,ID=-2.0A

N-Ch

2.5

P-Ch

Td(on)

N-Ch

2.5

Turn-on Time

P-Ch

3.9

N-Ch

P-Ch

Td(off)

N-Ch

Turn-off Time

P-Ch

N-Channel

VDD=15V

RL=10Ω

VGEN=10V

RG=3Ω

P-Channel

VDD=-15V

RL=15Ω

VGEN=-10V

RG=3Ω

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