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STT8205S Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT8205S
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT8205S Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
STT8205S
6 A, 20V,RDS(ON) 28m
N-Channel Enhancement Mode Power Mos.FET
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@4.5V
Continuous Drain Current,VGS@4.5V
Pulsed Drain Current
Ω
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient (Max)
A
V
V
A
A
ID@TA=70
/W
C
W/ C
C
W
VDS
VGS
ID@TA=25
IDM
PD@TA=25
Tj, Tstg
Rthj-a
20
±8
20
6
4.8
1.14
0.01
110
-55~+150
3
3
3
1
o
o
o
C
o
C
o
C
o
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Parameter
Symbol
Ratings
Unit
01-Jun-2002 Rev. A
Page 1 of
4
G1
S2
G2
D1
S1
D2
8 2 0 5 S
Description
The STT8205S provide the designer with best combination of fast
* Low On-Resistance
The TSSOP-6 package is universally used for all commercial-
switching, low on-resistance and cost-effectiveness.
Features
* Low Drive Current
* Capable of 2.5V Gate Drive
Millimeter
Millimeter
industrial surface mount applications.
Date Code
1
5
2
3
4
6
D1
G1
S1
G2
D2
S2
REF.
Min.
Max.
REF.
Min.
Max.
A
1.10 MAX.
L
0.45 REF.
A1
0
0.10
L1
0.60 REF.
A2
0.70
1.00
10°
c
0.12 REF.
b
0.30
0.50
D
2.70
3.10
e
0.95 REF.
E
2.60
3.00
e1
1.90 REF.
E1
1.40
1.80
RoHS Compliant Product


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