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UMD2N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # UMD2N
Description  NPN-PNP built-in re sistors Multi-Chip Digital Transistor
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

UMD2N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
UMD2N
NPN-PNP built-in resistors
Multi-Chip Digital Transistor
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Features
* DTA124E and DTC124E transistors are
built-in a SOT-363 package.
* Transistor elements are independent,
eliminating interference.
* Mounting cost and area can be cut in half.
Electrical Characteristics( Tamb=25OC unless otherwise specified)
01-Jan-2006 Rev. A
Page 1 of 3
DTr2
DTr1
(3)
(2)
(4)
(5)
R1 R
R2
R1=R2=22K
MARKING:D2
Parameter
Symbol
Limits
Unit
(1)
(6)
2
R1
Supply voltage
VCC
50
V
Input voltage
VIN
-10~40
V
IO
30
Output current
IC(MAX)
-100
mA
Power dissipation
Pd
150(TOTAL)
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~150
℃
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
VI(off)
0.5
VCC=5V ,IO=100μA
Input voltage
VI(on)
3
V
VO=0.2V ,IO=10mA
Output voltage
VO(on)
0.3
V
IO/II=10mA/0.5mA
Input current
II
0.36
mA
VI=5V
Output current
IO(off)
0.5
µA
VCC=50V, VI=0
DC current gain
GI
56
VO=5V,IO=5mA
Input resistance
R1
15.4
22
28.6
KΩ
Resistance ratio
R2/R1
0.8
1
1.2
Transition frequency
fT
250
MHz
VCE=10V ,IE=-5mA,f=100MHz
SOT-363
Dimensions in inches and (millimeters)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.096(2.45)
.085(2.15)
.021REF
(0.525)REF
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.053(1.35)
.045(1.15)
.043(1.10)
.035(0.90)
.039(1.00)
.035(0.90)
.004(0.10)
.000(0.00)
8
o
o
0


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