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Dated : 07/04/2009
SEMTECH ELECTRONICS LTD.
(
Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BAS16WS
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features
• Fast switching diode
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
75
V
Peak Reverse Voltage
VRM
100
V
Forward Current (Continuous)
IF
250
mA
Non-Repetitive Peak Forward Current
t = 1 µs
t = 1 ms
t = 1 s
IFSM
2
1
0.5
A
A
A
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Tstg
- 65 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Max.
Unit
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
VF
0.715
0.855
1
1.25
V
Reverse Leakage Current
at VR = 75 V
at VR = 25 V, TJ = 150 OC
at VR = 75 V, TJ = 150 OC
IR
1
30
50
µA
Diode Capacitance
at VR = 0 V, f = 1 MHz
Ctot
2
pF
Reverse Recovery Time
at IF = 10 mA to IR = 10 mA, IR = 1 mA, RL = 100 Ω
trr
6
ns
Anode
2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
1
2
PINNING
1
PIN
Cathode
DESCRIPTION
W2
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