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Dated : 07/04/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
1N60PW, 1N60SW
Schottky Barrier Diode
FEATURES
• High reliability
• Low forward voltage and reverse current
APPLICATIONS
• For electronic calculator, etc.
• Low current rectification and high speed switching
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
45
V
Reverse Voltage
VR
10
V
Peak Forward Current
IFM
150
mA
Average Rectified Output Current
IO
50
mA
Surge Forward Current
Isurge
500
mA
Junction Temperature
Tj
125
O
C
Storage Temperature Range
TS
-55 to +125
O
C
Characteristics (Ta = 25 OC)
Parameter
Symbol
Min.
Max.
Unit
Forward Current
at VF = 1 V
IF
4
-
mA
Reverse Current
at VR = 10 V
1N60PW
1N60SW
IR
-
-
50
100
µA
Reverse Voltage
at IR = 100 µA
VR
45
-
V
Junction Capacitance
at f = 1 MHz, V = -1 V
CJ
-
1
pF
Rectification efficiency
at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz
η
55
-
%
Pair Δ IF ≤ 6 mA at 1V, Δ IR ≤ 20 µA at 10 V
PINNING
2
Cathode
Anode
1
2
1
Top View
PIN
DESCRIPTION
FM
Marking Code: 1N60PW: "FM"
1N60SW: "FN"
Simplified outline SOD-123 and symbol
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