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Dated : 16/09/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
BV45
NPN Silicon Epitaxial Planar Transistor
High voltage fast switching power transistor
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
700
V
Collector Emitter Voltage
VCEO
400
V
Emitter Base Voltage
VEBO
9
V
Collector Current
IC
0.75
A
Collector Peak Current (tp < 5 ms)
ICM
1.5
A
Base Current
IB
0.4
A
Base Peak Current
IBM
0.75
A
Total Dissipation
Ptot
0.95
W
Operating Junction Temperature
Tj
150
O
C
Storage Temperature Range
Tstg
- 65 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 5 V, IC = 0.2 A
at VCE = 5 V, IC = 0.4 A
hFE
hFE
10
5
30
20
-
-
Collector Cutoff Current
at VCB = 700 V
ICBO
-
250
µA
Emitter Cutoff Current
at VEB = 9 V
IEBO
-
1
mA
Collector Emitter Breakdown Voltage
at IC = 1 mA
V(BR)CEO
400
-
V
Collector Emitter Saturation Voltage
at IC = 0.2 A, IB = 40 mA
at IC = 0.3 A, IB = 75 mA
at IC = 0.4 A, IB = 135 mA
VCEsat
-
-
-
0.5
1
1.5
V
Base Emitter Saturation Voltage
at IC = 0.2 A, IB = 40 mA
at IC = 0.3 A, IB = 75 mA
VBEsat
-
-
1
1.2
V
TO-92 Plastic Package
Weight approx. 0.19g
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