Dated :01/04/2006 H
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
DB101 THRU DB107
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
Reverse Voltage – 50 to 1000 V
Forward Current – 1 A
Features
• Glass passivated chip junction
• Low forward voltage drop
• High surge overload rating of 50 A peak
• Ideal for printed circuit board
Mechanical Data
• Case: Molded plastic, DB
• Epoxy: UL 94V-0 rate flame retardant
• Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
• Mounting position: Any
Absolute Maximum Ratings and Characteristics
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Parameter
Symbols DB101 DB102 DB103 DB104 DB105 DB106 DB107 Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current at TA = 40
OC
I(AV)
1
A
Peak Forward Surge Current 8.3 ms Single Half-sine-wave
Superimposed on Rated Load (JEDEC Method)
IFSM
50
A
Maximum Forward Voltage at 1 A
VF
1.1
V
at TA = 25
OC
5
Maximum Reverse Current at Rated
DC Blocking Voltage
at TA = 125
OC
IR
500
µA
Typical Junction Capacitance
1)
CJ
25
pF
Typical Thermal Resistance
2)
RθJA
40
OC/W
Typical Thermal Resistance
2)
RθJL
15
OC/W
Operating and Storage Temperature Range
TJ ,TS
-55 to +150
OC
1) Measured at 1 MHz and applied reverse voltage of 4 V
2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with 0.5 X 0.5" (13 X 13
mm) copper pads.
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