Excelics

EMA406C

TENTATIVE DATA SHEET

26 - 32 GHz Low Noise MMIC

FEATURES

•• 26 -32 GHz BANDWIDTH

•• +20.0 dBm TYPICAL OUTPUT POWER

•• 21 dB ±± 1.5 dB TYPICAL POWER GAIN

•• FOUR SECTION, DISTRIBUTED AMPLIFIER

•• DUAL BIAS SUPPLY

•• 0.3 MICRON RECESSED “MUSHROOM” GATE

•• Si

•• ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES EXTRA HIGH POWER

EFFICIENCY, AND HIGH RELIABILITY

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

F

Operating Frequency Range

26

32

GHz

Ouput Power at 1dB Gain Compression

20

dBm

Gss

Small Signal Gain

21

dB

∆∆Gss

Small Signal Gain Flatness

± 1.5

dB

NF

Noise Figure

6

dB

VSWR in

Input VSWR

2.0:1

VSWR out

Output VSWR

3.0:1

Idd

Power Supply Current

140

mA

Vdd

Power Supply Voltage

5

8

V

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

8V

Vgs

Gate-Source Voltage

-8V

-3V

Ids

Drain Current

Idss

215mA

Igf

Forward Gate Current

50 mA

8.5mA

Pin

Input Power

15dBm

@3dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

1 W

0.85 W

Note:

1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

Chip Size 1060 x 2500 microns

Chip Thickness: 75

± 13 microns

All Dimensions In Microns