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Dated : 22/11/2008
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BAV101~BAV103
SILICON EPITAXIAL PLANAR DIODES
High Voltage General Purpose Diodes
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
BAV101
BAV102
BAV103
VRRM
120
200
250
V
Reverse Voltage
BAV101
BAV102
BAV103
VR
100
150
200
V
Continuous Forward Current
IF
250
mA
Repetitive Peak Forward Current
IFRM
625
mA
Non-repetitive Peak Forward Surge Current
at t = 100 µs
at t = 1 s
IFSM
3
1
A
Total Power Dissipation
Ptot
400
mW
Thermal Resistance, Junction to Ambient
RθJA
300
K/W
Junction Temperature
Tj
175
O
C
Storage Temperature Range
Tstg
- 65 to + 175
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Max.
Unit
Forward Voltage
at IF = 100 mA
at IF = 200 mA
VF
1
1.25
V
Reverse Current
at VR = 100 V
at VR = 150 V
at VR = 200 V
at VR = 100 V, Tj = 150 OC
at VR = 150 V, Tj = 150 OC
at VR = 200 V, Tj = 150 OC
BAV101
BAV102
BAV103
BAV101
BAV102
BAV103
IR
100
100
100
100
100
100
nA
nA
nA
µA
µA
µA
Diode Capacitance
at f = 1 MHz, VR = 0
Cd
5
pF
Reverse Recovery Time
at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω
trr
50
ns
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