EMP107

UPDATED 05/08/2008

5.9 – 7.9 GHz Power Amplifier MMIC

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 2 of 4

Revised May 2008

Typical Performance:

4

6

8

10

Frequency (GHz)

EMP107 Small Signal Performance

-25

-20

-15

-10

-5

0

5

10

15

20

25

DB(|S[2,1]|) *

DB(|S[1,1]|) *

DB(|S[2,2]|) *

3. P-1 VS Vds @Idsq=200mA

EMP107 OIMD (dBc) vs. Pout(dBm)

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

0

5

10

15

20

25

Each Tone Pout (dBm)

OIMD3

OIMD5

EMP107 P1dB(dBm) vs. Vds

19

20

21

22

23

24

25

26

27

56789

Frequency (GHz)

Vds=5V

Vds=7V

APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE)

Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper tungsten

or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325ºC for 20 minutes.

Die attach should be done with Gold/Tin (80/20) eutectic alloy in inert ambient gas. The backside is used as heatsinking, DC,

and RF contacts.

All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental

discharge through a die.