EMP110

UPDATED 12/15/2004

5.9 – 7.9 GHz Power Amplifier MMIC

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 2 of 3

Revised December 2004

Typical Performance:

4

6

8

10

Frequency (GHz)

EMP110 Small Signal Performance

-25

-20

-15

-10

-5

0

5

10

15

20

25

DB(|S[2,1]|) *

DB(|S[1,1]|) *

DB(|S[2,2]|) *

3. P-1 VS Vds @Idsq=400mA

EMP110 OIMD (dBc) vs. Pout(dBm)

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

0

5

10

15

20

25

Each Tone Pout (dBm)

OIMD3

OIMD5

EMP110 P1dB(dBm) vs. Vds

22

23

24

25

26

27

28

29

30

5678

9

Frequency (GHz)

Vds=7V

Vds=5V

APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE)

Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper

tungsten or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325ºC for 20

minutes.

Die attach should be done with Gold/Tin (80/20) eutectic alloy in inert ambient gas. The backside is used as heatsinking,

DC, and RF contacts.

All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental

discharge through a die.