Excelics

EFA024A

PRELIMINARY DATA SHEET

Low Distortion GaAs Power FET

••

+18.0dBm TYPICAL OUTPUT POWER

••

11.0dB TYPICAL POWER GAIN AT 12GHz

••

TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED

GAIN AT 12GHz

••

0.3 X 240 MICRON RECESSED “MUSHROOM” GATE

••

••

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

••

Idss SORTED IN 5mA PER BIN RANGE

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Compression

f=12GHz

18

Vds=6V, Ids=50% Idss

f=18GHz

16

18

dBm

Gain at 1dB Compression

f=12GHz

11

Vds=6V, Ids=50% Idss

f=18GHz

9

9

dB

Power Added efficiency at 1dB Compression

PAE

Vds=6V, Ids=50% Idss

f=12GHz

30

%

NF

Noise Figure

Vds=3V,Ids=15mA

f=12GHz

1.6

dB

Associated Gain Vds=3V,Ids=15mA

f=12GHz

10

dB

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

35

60

85

mA

Gm

Transconductance

Vds=3V, Vgs=0V

30

40

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=1.0mA

-2

-3.5

V

BVgd

Drain Breakdown Voltage Igd=100uA

-8

-12

V

BVgs

Source Breakdown Voltage Igs=100uA

-6

-11

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

135

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

10V

6V

Vgs

Gate-Source Voltage

-8V

-4V

Ids

Drain Current

Idss

Idss

Igsf

Forward Gate Current

6mA

1mA

Pin

Input Power

19dBm

@ 3dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

1W

830mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Chip Thickness: 75

± 13 microns

All Dimensions In Microns

G

G

S

S

S

D

D