Excelics

EFA480C

DATA SHEET

Low Distortion GaAs Power FET

•

+34.0dBm TYPICAL OUTPUT POWER

•

18.0dB TYPICAL POWER GAIN AT 2GHz

•

0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE

•

•

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

•

Idss SORTED IN 80mA PER BIN RANGE

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Compression

f= 2GHz

Vds=8V, Ids=50% Idss

f= 4GHz

32.0

34.0

34.0

dBm

Gain at 1dB Compression

f= 2GHz

Vds=8V, Ids=50% Idss

f= 4GHz

16.0

18.0

12.5

dB

PAE

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f= 2GHz

40

%

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

800

1360

1760

mA

Gm

Transconductance

Vds=3V, Vgs=0V

560

720

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=10mA

-2.0

-3.5

V

BVgd

Drain Breakdown Voltage Igd=4.8mA

-12

-15

V

BVgs

Source Breakdown Voltage Igs=4.8mA

-7

-14

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

12

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

8V

Vgs

Gate-Source Voltage

-8V

-4V

Ids

Drain Current

Idss

1.2A

Igsf

Forward Gate Current

120mA

20mA

Pin

Input Power

32dBm

@3dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

11.4 W

9.5 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

Chip Thickness: 75

± 13 microns

All Dimensions In Microns

680

104

160

620

72

155

75

100

94

120

D

D

G

G

SS

S