Excelics

EPA090A/EPA090AV

DATA SHEET

High Efficiency Heterojunction Power FET

11.0dB FOR EPA090AV AT 18GHz

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

SYMBOLS

PARAMETERS/TEST CONDITIONS

EPA090A

EPA090AV

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

Output Power at 1dB Compression

f=12GHz

28.0

28.0

Vds=8V, Ids=50% Idss

f=18GHz

25.0

28.0

25.0

28.0

dBm

Gain at 1dB Compression

f=12GHz

11.5

13.0

12.0

13.5

Vds=8V, Ids=50% Idss

f=18GHz

10.0

11.0

dB

Gain at 1dB Compression

PAE

Vds=8V, Ids=50% Idss

f=12GHz

45

46

%

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

160

270

380

160

270

380

mA

Gm

Transconductance

Vds=3V, Vgs=0V

180

290

180

290

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=3.0mA

-1.0

-2.5

-1.0

-2.5

V

BVgd

Drain Breakdown Voltage Igd=1.0mA

-11

-15

-11

-15

V

BVgs

Source Breakdown Voltage Igs=1.0mA

-7

-14

-7

-14

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

45

35

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

EPA090A

EPA090AV

ABSOLUTE

1

CONTINUOUS

2

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

8V

12V

8V

Vgs

Gate-Source Voltage

-8V

-3V

-8V

-3V

Ids

Drain Current

Idss

315mA

Idss

Idss

Igsf

Forward Gate Current

45mA

7.5mA

45mA

7.5mA

Pin

Input Power

26dBm

@ 3dB

Compression

26dBm

@ 3dB

Compression

Tch

Channel Temperature

175

150

175

150

Tstg

Storage Temperature

-65/175

-65/150

-65/175

-65/150

Pt

Total Power Dissipation

3.0W

2.5W

3.8W

3.2W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

Chip Thickness: 75

± 20 microns

All Dimensions In Microns

: Via Hole

No Via Hole For EPA090A