Excelics

EPA120E/EPA120EV

DATA SHEET

High Efficiency Heterojunction Power FET

10.5dB FOR EPA120EV AT 18GHz

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

SYMBOLS

PARAMETERS/TEST CONDITIONS

EPA120E

EPA120EV

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

Output Power at 1dB Compression

f=12GHz

29.5

29.5

Vds=8V, Ids=50% Idss

f=18GHz

28.0

29.5

28.0

29.5

dBm

Gain at 1dB Compression

f=12GHz

10.0

12.0

10.5

12.5

Vds=8V, Ids=50% Idss

f=18GHz

9.5

10.5

dB

Gain at 1dB Compression

PAE

Vds=8V, Ids=50% Idss

f=12GHz

45

46

%

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

210

360

510

210

360

510

mA

Gm

Transconductance

Vds=3V, Vgs=0V

240

380

240

380

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=3.5mA

-1.0

-2.5

-1.0

-2.5

V

BVgd

Drain Breakdown Voltage Igd=1.2mA

-11

-15

-11

-15

V

BVgs

Source Breakdown Voltage Igs=1.2mA

-7

-14

-7

-14

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

35

25

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

EPA120E

EPA120EV

ABSOLUTE

1

CONTINUOUS

2

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

8V

12V

8V

Vgs

Gate-Source Voltage

-8V

-3V

-8V

-3V

Ids

Drain Current

Idss

405mA

Idss

Idss

Igsf

Forward Gate Current

60mA

10mA

60mA

10mA

Pin

Input Power

27dBm

@ 3dB

Compression

27dBm

@ 3dB

Compression

Tch

Channel Temperature

175

150

175

150

Tstg

Storage Temperature

-65/175

-65/150

-65/175

-65/150

Pt

Total Power Dissipation

3.9W

3.2W

5.4W

4.5W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

Chip Thickness: 75

± 20 microns

All Dimensions In Microns

: Via Hole

No Via Hole For EPA120E