Excelics

EPA240D

DATA SHEET

High Efficiency Heterojunction Power FET

•

+33dBm TYPICAL OUTPUT POWER

•

20.0 dB TYPICAL POWER GAIN AT 2GHz

•

0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE

•

•

ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES EXTRA HIGH POWER

EFFICIENCY, AND HIGH RELIABILITY

•

Idss SORTED IN 60mA PER BIN RANGE

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Compression

f= 2GHz

Vds=8V, Ids=50% Idss

f= 4GHz

31.0

33.0

33.0

dBm

Gain at 1dB Compression

f= 2GHz

Vds=8V, Ids=50% Idss

f= 4GHz

18.5

20.0

15.0

dB

PAE

Power Added Efficiency at 1dB Compression

Vds=8V, Ids=50% Idss

f=2GHz

55

%

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

440

720

940

mA

Gm

Transconductance

Vds=3V, Vgs=0V

480

760

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=6mA

-1.0

-2.5

V

BVgd

Drain Breakdown Voltage Igd=2.4mA

-11

-15

V

BVgs

Source Breakdown Voltage Igs=2.4mA

-7

-14

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

23

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

8V

Vgs

Gate-Source Voltage

-8V

-3V

Ids

Drain Current

Idss

620mA

Igsf

Forward Gate Current

120mA

20mA

Pin

Input Power

30dBm

@ 3dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

6.0 W

5.0W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998

Web Site: www.excelics.com

Chip Thickness: 75

± 13 microns

All Dimensions In Microns

104

620

72

155

75

100

94

410

D

G

SS