Excelics

EPB018A5/A7/A9

DATA SHEET

Super Low Noise High Gain Heterojunction FET

•

VERY HIGH fmax: 120GHz

•

TYPICAL 0.50~0.90dB NOISE FIGURE AND 12.0~13.0dB

ASSOCIATED GAIN AT 12GHz

•

0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE

•

•

ADVANCED EPITAXIAL HETEROJUNCTION PROFILE

PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH

RELIABILITY

•

Idss SORTED IN 5 mA PER BIN RANGE

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

EPB018A5

0.50

0.60

EPB018A7

0.65

0.80

NF

Noise Figure, f=12GHz

Vds=2V, Ids=15mA

EPB018A9

0.95

1.20

dB

EPB018A5

12.0

13.0

EPB018A7

11.5

12.5

Ga

Associated Gain, f=12GHz

Vds=2V, Ids=15mA

EPB018A9

11.0

12.0

dB

Output Power at 1dB Compression

f=12GHz

Vds=3V, Ids=25mA

f=18GHz

15.0

15.0

dBm

Gain at 1dB Compression

f=12GHz

Vds=3V, Ids=25mA

f=18GHz

15.0

13.0

dB

Idss

Saturated Drain Current

Vds=2V, Vgs=0V

15

45

80

mA

Gm

Transconductance

Vds=2V, Vgs=0V

50

90

mS

Vp

Pinch-off Voltage

Vds=2V, Ids=1.0mA

-0.8

-2.5

V

BVgd

Drain Breakdown Voltage Igd=10uA

-3

-6

V

BVgs

Source Breakdown Voltage Igs=10uA

-3

-6

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

185

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

5V

4V

Vgs

Gate-Source Voltage

-3V

-2V

Ids

Drain Current

Idss

Idss

Igsf

Forward Gate Current

2mA

0.3mA

Pin

Input Power

12dBm

@1dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

740mW

625mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Chip Thickness: 75

± 13 microns

All Dimensions In Microns

'

6

6

*