CHINA

SEMICONDUCTOR

Spec. No.

CORPORATION

Rev.

(Ta=25 )

Symbol

Unit

Pd

mW

mA

mA

-

mA/

V

Topr

Tstg

Electro-optical Characteristics -

(Ta=25 )

Symbol

Min.

Typ.

Max.

Unit

Condition

-

2.0

2.8

V

Iv

-

6

-

mcd

q

-

632

-

nm

Od

-

624

-

nm

-

35

-

nm

JS

-

-

100

A

IV-m

-

-

2:1

.

(Ta=25 )

Symbol

Min.

Typ.

Max.

Unit

Condition

-

2.1

2.8

V

Iv

-

7

-

mcd

q

-

568

-

nm

Od

-

572

-

nm

-

30

-

nm

JS

-

-

100

A

IV-m

-

-

2:1

.

Page

3/5

Forward Voltage Per Segment

Luminous Intensity Per Segment

Peak Emission Wavelength

Dominant Wavelength

Yellow Green

Orange

Yellow Green

Parameter

Forward Voltage Per Segment

Luminous Intensity Per Segment

Solder temperature 1/16 inch below seating plane for 3 seconds at 260

Parameter

5

Operating Temp.

-35 ~ +85

Storage Temp.

-35 ~ +85

70

25

90

Parameter

Power Dissipation Per Dice

Continuous Forward Current Per Dice

Peak Current Per Dice(duty cycle 1/10, 1kHz)

Peak Emission Wavelength

Dominant Wavelength

Spectrum Radiation Bandwidth

Reverse Current

Spectrum Radiation Bandwidth

Reverse Current

Luminous Intensity Matching Ratio

PS-ND-08090404

A

Model No CSM-58261EG

http://www.csctw.com.tw

Luminous Intensity Matching Ratio

Derating Linear From 25

Per Dice

0.33

Reverse Voltage Per Dice

Rating