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THS4601 Datasheet(PDF) 1 Page - Texas Instruments |
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THS4601 Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 27 page ![]() THS4601 SLOS388B – OCTOBER 2001 – REVISED JUNE 2002 WIDEBAND, FET-INPUT OPERATIONAL AMPLIFIER 1 www.ti.com FEATURES D Gain Bandwidth Product: 180 MHz D Slew Rate: 100 V/µs D Maximum Input Bias Current: 100 pA D Input Voltage Noise: 5.4 nV/√Hz D Maximum Input Offset Voltage: 4 mV D Input Impedance: 109 Ω || 10 pF D Power Supply Voltage Range: ±5 to ±15 V D Unity Gain Stable APPLICATIONS D Wideband Photodiode Amplifier D High-Speed Transimpedance Gain Stage D Test and Measurement Systems D Current-DAC Output Buffer D Active Filtering D High-Speed Signal Integrator D High-Impedance Buffer DESCRIPTION The THS4601 is a high-speed, FET-input operational amplifier designed for applications requiring wideband operation, high-input impedance, and high-power supply voltages. By providing a 180-MHz gain- bandwidth product, ±15-V supply operation, and 100-pA input bias current, the THS4601 is capable of wideband transimpedance gain and large output signal swing simultaneously. Low current and voltage noise allow amplification of extremely low-level input signals while still maintaining a large signal-to-noise ratio. The characteristics of the THS4601 ideally suit it for use as a wideband photodiode amplifier. Photodiode output current is a prime candidate for transimpedance amplification, an application of which is illustrated in Figure 1. Other potential applications include test and measurement systems requiring high-input impedance, digital-to-analog converter output buffering, high-speed integration, and active filtering. A SELECTION OF RELATED OPERATIONAL AMPLIFIER PRODUCTS DEVICE VS (V) BW (MHz) SLEW RATE (V/ µs) VOLTAGE NOISE (nV √Hz) DESCRIPTION OPA627 ±15 16 55 4.5 Unity-gain stable FET-input amplifier OPA637 ±15 80 135 4.5 Gain of +5 stable FET-input amplifier OPA655 ±5 400 290 6 Unity-gain stable FET-input amplifier _ + THS4601 CF = 0.7 pF λ RL = 1 kΩ 60 65 70 75 80 85 90 95 100 105 0.1 1 10 100 Frequency – MHz 100 k Ω TRANSIMPEDANCE BANDWIDTH Diode Capacitance: 18 pF –3 dB Bandwidth: 4 MHz Figure 1. Wideband Photodiode Transimpedance Amplifier RF = 100 kΩ –VBias 18 pF PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 2002, Texas Instruments Incorporated Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. |
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