GLC130 datasheet(1/1 Pages) GSG

Part #	GLC130

Description	N Channel Power MOSFET FOR LOGIC DRIVER

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Manufacturer	GSG [Gunter Seniconductor GmbH.]

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Gunter Semiconductor GmbH

GLC130

N Channel Power MOSFET FOR LOGIC DRIVER

Chip Specification

General Description:

* Advanced Process Technology

* Dynamic dv/dt Rating

* 175℃

℃

℃ Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* RDS(ON) rated at VGS = 5V

* Ease of parallel

Mechanical Data:

D13

Dimension

2.68mm x 3.75mm

Thickness:

400

µµµµm

Metallization:

Top :

:

Al

Backside :

CrNiAg / Au

Suggested Bonding Conditions:

Die Mounting:

Solder Perform

95/5 PbSn or 92.5./2.5/5 PbAgIn

Source Bonding Wire: 10 mil Al

Absolute Maximum Rating

@Ta=25℃

℃

Characteristics

Symbol

Limit

Unit

Test Conditions

Drain-to-Source Breakdown Voltage

V(BR)DSS

100

V

VGS=0V, ID=250

µΑ

Static Drain-to - Source On-resistance

RDS(ON)

0.16

Ω

VGS=5V, ID=9

Α

Continuous Drain current ( in target package)

ID@25℃

15

A

VGS= 5V

Continuous Drain current ( in target package)

ID@100℃

11

A

VGS= 5V

Operation Junction Temperature

Tj

-55~175

℃

Storage Temperature

TSTR

-55~175

℃

Target Device: IRL530

TO-220AB

PD

88

W

@Tc=25℃

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GLC130 Datasheet(PDF) 1 Page - Gunter Seniconductor GmbH.

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