MBR 1045

Chips for Schottky Diodes

Chip Specification

General Description:

Schottky Diode chips with Mo-barrier for switch mode power

rectifiers with the following features:

* Guard-ring for stress protection

* Extremely low forward voltage

* 125 ℃

℃

℃

℃ operation junction temperature

* reverse avalanche behavior

Mechanical Data:

MBR1045 passivated Silicon Chip

Demension(mil)

105x105

Thickness:

350 +- 20

µm

Metallization:

Top ( Anode ) :

Al Ag

Bottom ( Cathode) : TiNiAg

Forward Current(A)

10A

Reverse Voltage (V): >45 V

Type

Chip

VF(V)@25 C

VF(V)@125 C

size(mil)

at If=10A

at If=10A

at 25 C

MBR1045

105x105

620mV

540mV

0,6mA

* expected value for recommended assembling with both side soldering

Typical devise MBR1045

Note: Other voltages & Top Metal AL are available