FG2000FX-50DA datasheet(2/4 Pages) MITSUBISHI

2 / 4 page

Aug.1998

100

5 7 101

5 7 102

1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

104

103

102

101

Tj = 125°C

100

102

57 103 23 5 7 104 23 5 7 105

102

101

10–1

VFGM = 10V

VGT = 1.5V

PFG(AV) = 50W

IFGM = 100A

Tj = 25°C

PFGM = 280W

IGT = 2500mA

0.020

10–3

5710–2

100

57101

23 5 710–1 23 5 7 100

0.008

0.012

0.016

0.004

ON-STATE VOLTAGE (V)

MAXIMUM ON-STATE CHARACTERISTIC

CONDUCTION TIME

(CYCLES AT 60Hz)

RATED SURGE ON-STATE CURRENT

GATE CURRENT (mA)

GATE CHARACTERISTICS

TIME (S)

MAXIMUM THERMAL IMPEDANCE

CHARACTERISTIC

(JUNCTION TO FIN)

2.4

—

1.5

2500

0.017

µs

°C/W

On-state voltage

Repetitive peak reverse current

Repetitive peak off-state current

Reverse gate current

Critical rate of rise of off-state voltage

Turn-on time

Peak gate turn-off current

Gate trigger voltage

Gate trigger current

Thermal resistance

Tj = 125

°C, ITM = 2000A, Instantaneous measurment

Tj = 125

°C, VRRM Applied

Tj = 125

°C, VDRM Applied, VGK = –2V

Tj = 125

°C, VRG = 17V

Tj = 125

°C, VD = 1250V, VGK = –2V

Tj = 125

°C, ITM = 2200A, IGM = 30A, VD = 1250V

Junction to fin

MITSUBISHI GATE TURN-OFF THYRISTORS

FG2000FX-50DA

HIGH POWER INVERTER USE

PRESS PACK TYPE

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

Limits

Min

Typ

Max

Unit

VTM

IRRM

IDRM

IRG

dv/dt

tgt

IGQM

VGT

IGT

Rth(j-f)

tgq

Turn-off time

Tj = 125

°C, ITM = 2200A, VDM = 1875V, diGQ/dt = –30A/µs

VRG = 17V, CS = 4.0

µF, LS = 0.3µH

DC METHOD : VD = 24V, RL = 0.1

Ω, Tj = 25°C

—

—30

µs

—

610

—

1000

—

PERFORMANCE CURVES

FG2000FX-50DA Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

FG2000FX-50DA Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

Html Pages

1 2 3 4

Datasheet Download

Link URL