1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

BC

212

BC

213

BC

214

Unit

Collector – Emitter Voltage

VCEO

–50

–30

–30

Vdc

Collector – Base Voltage

VCBO

–60

–45

–45

Vdc

Emitter – Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–100

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

350

2.8

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.0

8.0

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

357

°C/W

Thermal Resistance, Junction to Case

RqJC

125

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Collector – Emitter Breakdown Voltage

BC212

(IC = –2.0 mAdc, IB = 0)

BC213

BC214

V(BR)CEO

–50

–30

–30

—

—

—

—

—

—

Vdc

Collector – Base Breakdown Voltage

BC212

(IC = –10 mA, IE = 0)

BC213

BC214

V(BR)CBO

–60

–45

–45

—

—

—

—

—

—

Vdc

Emitter – Base Breakdown Voltage

BC212

(IE = –10 mAdc, IC = 0)

BC213

BC214

V(BR)EBO

–5

–5

–5

—

—

—

—

—

—

Vdc

Collector–Emitter Leakage Current

BC212

(VCB = –30 V)

BC213

BC214

ICBO

—

—

—

—

—

—

–15

–15

–15

nAdc

Emitter–Base Leakage Current

BC212

(VEB = –4.0 V, IC = 0)

BC213

BC214

IEBO

—

—

—

—

—

—

–15

–15

–15

nAdc

Order this document

by BC212/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC212,B

BC213

BC214

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER