1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

20

Vdc

Collector – Emitter Voltage

VCES

25

Vdc

Emitter – Base Voltage

VEBO

5.0

Vdc

Collector Current — Continuous

IC

1.0

Adc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = 10 mA, IB = 0)

V(BR)CEO

20

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = 100 µA, IE = 0 )

V(BR)CBO

25

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 100 µA, IC = 0)

V(BR)EBO

5.0

—

—

Vdc

Collector Cutoff Current

(VCB = 25 V, IE = 0)

(VCB = 25 V, IE = 0, TJ = 150°C)

ICBO

—

—

—

—

10

1.0

µAdc

mAdc

Emitter Cutoff Current

(VEB = 5.0 V, IC = 0)

IEBO

—

—

10

µAdc

ON CHARACTERISTICS

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

(VCE = 1.0 V, IC = 0.5 A)

(VCE = 1.0 V, IC = 1.0 A)

hFE

50

85

60

—

—

—

—

375

—

—

Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz)

fT

65

—

—

MHz

Collector–Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)

VCE(sat)

—

—

0.5

V

Base–Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V)

VBE(on)

—

—

1.0

V

Order this document

by BC368/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

NPN

BC368

PNP

BC369

CASE 29–04, STYLE 14

TO–92 (TO–226AA)

1

2

3

Voltage and current are negative

for PNP transistors

COLLECTOR

2

3

BASE

1

EMITTER

COLLECTOR

2

3

BASE

1

EMITTER

NPN

PNP