BC372 BC373

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 250 mAdc, VCE = 5.0 Vdc)

(IC = 100 mAdc, VCE = 5.0 Vdc)

hFE

8.0

10

—

—

—

160

K

Collector – Emitter Saturation Voltage

(IC = 250 mAdc, IB = 0.25 mAdc)

VCE(sat)

—

1.0

1.1

Vdc

Base – Emitter Saturation Voltage

(IC = 250 mAdc, IB = 0.25 mAdc)

VBE(sat)

—

1.4

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain Bandwidth Product

(IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

200

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

10

25

pF

Noise Figure

(IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 k ohm, f = 1.0 kHz)

NF

—

2.0

—

dB

1. Pulse Test: Pulse Width = 300

ms, Duty Cycle 2.0%.

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

100 K

1 K

1

IC, COLLECTOR CURRENT (mA)

Figure 2. “Saturation” and “On” Voltages

1.6

1.2

1

0

5

100

10

500

10

100

1000

10 K

TA = 125°C

25

°C

–55

°C

VCE = 5 V

1.4

0.8

0.6

VBE(sat) @ IC/IB = 100

0.2

VBE(on) @ VCE = 5 V

VCE(sat) @ IC/IB = 100

0.4

Figure 3. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

1000

100

10

VCE = 5 V

TJ = 25°C

0.6

10

1

600

100

Figure 4. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

10

0.1

100

Cib

100

1

10

Cob