2SA633 datasheet(1/1 Pages) JMNIC

Part #	2SA633

Description	Silicon PNP Transistors

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Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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Power Transistors

www.jmnic.com

2SA633

Silicon PNP Transistors

B C E

Features

﹒With TO-202 package

Absolute Maximum Ratings Tc=25

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to base voltage

30

V

VCEO

Collector to emitter voltage

30

V

VEBO

Emitter to base voltage

5.0

V

IB

Base collector current

A

IC

Collector current

2.0

A

PC

Collector power dissipation

10

W

Tj

Junction temperature

150

Tstg

Storage temperature

-55~+150

TO-202

Electrical Characteristics Tc=25

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

ICBO

Collector-base cut-off current

VCB=30V; IE=0

100

uA

IEBO

Emitter-base cut-off current

VEB=5.0V; IC=0

100

uA

ICEO

Collector-emitter cut-off current

VCE=30V; IB=0

0.5

mA

VCBO

Collector-base breakdown voltage

VCEO(SUS)

Collector-emitter sustaining voltage

IC=20mA; IB=0

30

V

VEBO

Emitter-base breakdown voltage

IE=1mA; Ic=0

5

VCE(sat-1)

Collector-emitter saturation voltages

IC=1.5A; IB=0.15A

1.0

V

VCE(sat-2)

Collector-emitter saturation voltages

hFE-1

Forward current transfer ratio

IC=1A; VCE=5V

80

hFE-2

Forward current transfer ratio

hFE-3

Forward current transfer ratio

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