2SA634 datasheet(1/1 Pages) JMNIC

Part #	2SA634

Description	Silicon PNP Transistors

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Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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Power Transistors

www.jmnic.com

2SA634

Silicon PNP Transistors

B C E

Features

﹒With TO-220 package

Absolute Maximum Ratings Tc=25

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to base voltage

40

V

VCEO

Collector to emitter voltage

40

V

VEBO

Emitter to base voltage

5.0

V

IB

Base collector current

A

IC

Collector current

3.0

A

PC

Collector power dissipation

10

W

Tj

Junction temperature

150

Tstg

Storage temperature

-55~+150

TO-220

Electrical Characteristics Tc=25

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

ICBO

Collector-base cut-off current

VCB=40V; IE=0

200

uA

IEBO

Emitter-base cut-off current

VEB=5.0V; IC=0

200

uA

ICEO

Collector-emitter cut-off current

VCE=40V; IB=0

0.5

mA

VCBO

Collector-base breakdown voltage

VCEO(SUS)

Collector-emitter sustaining voltage

IC=1mA; IB=0

40

V

VEBO

Emitter-base breakdown voltage

IE=1mA; Ic=0

5

VCE(sat-1)

Collector-emitter saturation voltages

IC=3A; IB=0.3A

1.0

V

VCE(sat-2)

Collector-emitter saturation voltages

hFE-1

Forward current transfer ratio

IC=1A; VCE=5V

40

hFE-2

Forward current transfer ratio

hFE-3

Forward current transfer ratio

VBE(sat)1

Base-emitter stauration voltages

IC=3A; IB=0.3A

1.5

V

VBE(sat)1

Base-emitter stauration voltages

fT

Transition frepuency

Cob

Output Capacitance

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2SA634 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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