BC489,A,B

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

IC, COLLECTOR CURRENT (mA)

Figure 10. Base–Emitter Temperature Coefficient

–0.8

–2.8

1.0

100

10

R

θVB for VBE

0.5

2.0

5.0

20

50

200

–1.2

–1.6

–2.0

–2.4

500

IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

–1.0

–0.8

–0.6

–0.4

–0.2

0

TJ = 25°C

VBE(on) @ VCE = –1.0 V

VCE(sat) @ IC/IB = 10

–0.5

VBE(sat) @ IC/IB = 10

–1.0

–2.0

–5.0

–10

–20

–50

–100

–200

–500

IB, BASE CURRENT (mA)

Figure 12. Collector Saturation Region

–1.0

–0.8

–0.6

–0.4

–0.2

0

–0.1

–10

–1.0

TJ = 25°C

IC = –10 mA

–0.05

–0.2

–0.5

–2.0

–5.0

–20

–50 mA

–50

–100 mA

–250 mA –500 mA

IC, COLLECTOR CURRENT (mA)

Figure 13. Base–Emitter Temperature Coefficient

–0.8

–2.8

–1.0

–100

–10

R

θVB for VBE

–0.5

–2.0

–5.0

–20

–50

–200

–1.2

–1.6

–2.0

–2.4

–500