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2SB772Q Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SB772Q Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual 2SB772Q PNP Silicon Medium Power Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente Symbol A b b1 c D D1 E E1 e e1 L Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 2.900 0.900 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 3.100 1.100 Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.114 0.035 Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.122 0.043 Dimensions In Millimeters Dimensions In Inches 0.060TYP 1.500TYP D D1 C A b b1 e e1 SOT-89 1.BASE 2.COLLECTOR 3.EMITTER FEATURES Power dissipation P CM : 500mW Tamb=25 Collector current ICM :-3 A Collector-base voltage VB(BR)CBO : -40 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25 unlessotherwise specified CLASSIFICATION OF hFE(1) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100 A IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100 A IC=0 -6 V Collector cut-off current ICBO VCB= -40 V , IE=0 -1 A Collector cut-off current ICEO VCE=-30 V , IB=0 -10 A Emitter cut-off current IEBO VEB=-6V , IC=0 -1 A hFE 1 VCE= -2V, IC= -1A 60 400 DC current gain hFE 2 VCE=-2V, IC= -100mA 32 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V Transition frequency f T VCE= -5V, IC=-0.1A f = 10MHz 50 MHz CLASSIFICATION OF hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 01-Jun-2002 Rev. A Page 1 of 2 RoHS Compliant Product |
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