TLE2161, TLE2161A, TLE2161B

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE

µPOWER OPERATIONAL AMPLIFIERS

SLOS049D – NOVEMBER 1989 – REVISED MAY 1996

16

POST OFFICE BOX 655303

PARAMETER MEASUREMENT INFORMATION

2 k

Ω

8 k

Ω

(see Note A)

CL

VO

VCC –

VI

+

–

VCC +

NOTE A: CL includes fixture capacitance.

Figure 1. Slew-Rate Test Circuit

VO

RS

RS

2 k

Ω

VCC –

VCC +

+

–

Figure 2. Noise-Voltage Test Circuit

VO

RL

CL

(see Note A)

10 k

Ω

100

Ω

VI

VCC –

VCC +

+

–

NOTE A: CL includes fixture capacitance.

Figure 3. Gain-Bandwidth Product and Phase-Margin Test Circuit

typical values

Typical values presented in this data sheet represent the median (50% point) of device parametric performance.

Input bias and offset current

At the picoampere bias-current level typical of the TLE2161, TLE2161A, and TLE2161B, accurate

measurement of the bias current becomes difficult. Not only does this measurement require a picoammeter,

but test socket leakages can easily exceed the actual device bias currents. To accurately measure these small

currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters

with bias voltages applied but with no device in the socket. The device is then inserted into the socket, and a

second test that measures both the socket leakage and the device input bias current is performed. The two

measurements are then subtracted algebraically to determine the bias current of the device.