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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Low Noise Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

BC559

BC560

Unit

Collector – Emitter Voltage

VCEO

–30

–45

Vdc

Collector – Base Voltage

VCBO

–30

–50

Vdc

Emitter – Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–100

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = –10 mAdc, IB = 0)

BC559

BC560

V(BR)CEO

–30

–45

—

—

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = –10 µAdc, IE = 0)

BC559

BC560

V(BR)CBO

–30

–50

—

—

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

V(BR)EBO

–5.0

—

—

Vdc

Collector Cutoff Current

(VCB = –30 Vdc, IE = 0)

(VCB = –30 Vdc, IE = 0, TA = +125°C)

ICBO

—

—

—

—

–15

–5.0

nAdc

µAdc

Emitter Cutoff Current

(VEB = –4.0 Vdc, IC = 0)

IEBO

—

—

–15

nAdc

Order this document

by BC559/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC559, B, C

BC560C

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

COLLECTOR

1

2

BASE

3

EMITTER

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