1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

BC

556

BC

557

BC

558

Unit

Collector – Emitter Voltage

VCEO

–65

–45

–30

Vdc

Collector – Base Voltage

VCBO

–80

–50

–30

Vdc

Emitter – Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–100

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = –2.0 mAdc, IB = 0)

BC556

BC557

BC558

V(BR)CEO

–65

–45

–30

—

—

—

—

—

—

V

Collector – Base Breakdown Voltage

(IC = –100 µAdc)

BC556

BC557

BC558

V(BR)CBO

–80

–50

–30

—

—

—

—

—

—

V

Emitter – Base Breakdown Voltage

(IE = –100 mAdc, IC = 0)

BC556

BC557

BC558

V(BR)EBO

–5.0

–5.0

–5.0

—

—

—

—

—

—

V

Collector–Emitter Leakage Current

(VCES = –40 V)

BC556

(VCES = –20 V)

BC557

BC558

(VCES = –20 V, TA = 125°C)

BC556

BC557

BC558

ICES

—

—

—

—

—

—

–2.0

–2.0

–2.0

—

—

—

–100

–100

–100

–4.0

–4.0

–4.0

nA

µA

Order this document

by BC556/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC556,B

BC557A,B,C

BC558B

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

COLLECTOR

1

2

BASE

3

EMITTER