BC635 BC637 BC639

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1000

1

2

5

10

20

50

100

200

500

100

1

2

3

4 5

7

10

20

30 40 50 70

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

BC635

BC637

BC639

PD TA 25°C

PD TC 25°C

SOA = 1S

PD TC 25°C

PD TA 25°C

500

200

100

50

20

1

3

5

10

30

50

100

300 500

1000

IC, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

VCE = 2 V

500

300

100

50

20

1

10

100

1000

IC, COLLECTOR CURRENT (mA)

Figure 3. Current–Gain — Bandwidth Product

VCE = 2 V

1

0.8

0.6

0.4

0.2

0

1

10

100

1000

IC, COLLECTOR CURRENT (mA)

Figure 4. “Saturation” and “On” Voltages

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 2 V

VCE(sat) @ IC/IB = 10

–0.2

–1.0

–2.2

–1.6

1

3

5

10

30

50

100

300 500

1000

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

VCE = 2 VOLTS

∆T = 0°C to +100°C

θV for VBE