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2SA971 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA971 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 3 page ![]() JMnic Product Specification 2 Silicon PNP Power Transistors 2SA971 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -150 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-4V 30 COB Collector output capacitance IE=0 ; VCB=-10V;f=1MHz 270 pF fT Transition frequency IC=-0.5A ; VCE=-10V 10 MHz |
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