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TMS46400P Datasheet(PDF) 7 Page - Texas Instruments

Part # TMS46400P
Description  1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
PDF  25 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS46400P Datasheet(HTML) 7 Page - Texas Instruments

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TMS44400, TMS44400P, TMS46400, TMS46400P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS562C – MAY 1995 – REVISED NOVEMBER 1996
7
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
’46400 - 60
’46400P - 60
’46400 - 70
’46400P - 70
’46400 - 80
’46400P - 80
UNIT
PARAMETER
CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
VOH
High-level
IOH = – 2 mA (LVTTL)
2.4
2.4
2.4
V
VOH
High level
output voltage
IOH = – 100 µA (LVCMOS)
VCC – 0.2
VCC – 0.2
VCC – 0.2
V
VOL
Low-level
IOL = 2 mA (LVTTL)
0.4
0.4
0.4
V
VOL
Low level
output voltage
IOL = 100 µA (LVCMOS)
0.2
0.2
0.2
V
II
Input current
(leakage)
VI = 0 V to 3.9 V, VCC = 3.6 V,
All others = 0 V to VCC
± 10
± 10
± 10
µA
IO
Output current
(leakage)
VO = 0 V to VCC,VCC = 3.6 V,
CAS high
± 10
± 10
± 10
µA
ICC1
Read- or
write-cycle
current
(see Note 3)
Minimum cycle,
VCC = 3.6 V
70
60
50
mA
I
Sdb
After one memory cycle,
RAS and CAS high,
VIH = 2 V (LVTTL)
2
2
2
mA
ICC2
Standby
current
After one memory
cycle, RAS and CAS
high
’46400
300
300
300
µA
high,
VIH = VCC – 0.2 V
(LVCMOS)
’46400P
200
200
200
µA
ICC3
Average
refresh current
(RAS only or
CBR)
(see Note 4)
Minimum cycle,
VCC = 3.6 V,
RAS cycling,
CAS high (RAS only);
RAS low after CAS low (CBR)
70
60
50
mA
ICC4
Average page
current
(see Notes 3
and 5)
tPC = MIN,
VCC = 3.6 V,
RAS low,
CAS cycling
60
50
40
mA
ICC6†
Self-refresh
current
(see Note 3)
CAS
≤ 0.2 V,
RAS < 0.2 V,
tRAS and tCAS > 1000 ms
200
200
200
µA
ICC7
Standby
current,
outputs
enabled
(see Note 3)
RAS = VIH,
CAS = VIL,
Data out = enabled
5
5
5
mA
ICC10†
Battery-backup
current
(with CBR)
tRC = 125 µs,
tRAS ≤ 1 ms,
VCC – 0.2 V ≤ VIH ≤ 3.9 V,
0 V
≤ VIL ≤ 0.2 V,
W and OE = VIH,
Address and data stable
300
300
300
µA
† For TMS46400P only
NOTES:
3. ICC MAX is specified with no load connected.
4. Measured with a maximum of one address change while RAS = VIL
5. Measured with a maximum of one address change while CAS = VIH



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