1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistor

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

–45

Vdc

Collector–Base Voltage

VCBO

–60

Vdc

Emitter–Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–800

mAdc

DEVICE MARKING

BCW68GLT1 = DH

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board (1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

R

θJA

556

°C/W

Total Device Dissipation

Alumina Substrate, (2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

R

θJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0)

V(BR)CEO

–45

—

—

Vdc

Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0)

V(BR)CES

–60

—

—

Vdc

Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0)

V(BR)EBO

–5.0

—

—

Vdc

Collector Cutoff Current

(VCE= –45 Vdc, IE = 0)

(VCE= –45 Vdc, IB = 0, TA = 150°C)

ICES

—

—

—

—

–20

–10

nAdc

µAdc

Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0)

IEBO

—

—

–20

nAdc

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

Thermal Clad is a trademark of the Bergquist Company

Order this document

by BCW68GLT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BCW68GLT1

1

2

3

CASE 318 – 08, STYLE 6

SOT– 23 (TO – 236AB)

COLLECTOR

3

1

BASE

2

EMITTER