TPIC2601 datasheet(3/10 Pages) TI

3 / 10 page

TPIC2601

6-CHANNEL COMMON-SOURCE POWER DMOS ARRAY

SLIS048A – NOVEMBER 1996 – REVISED JANUARY 1998

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

source-to-drain diode characteristics, TC = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

trr(SD) Reverse-recovery time

IS = 1 A,

VGS 0

VDS = 48 V,

di/dt

100 A/

µs

Total diode charge

VGS = 0,

di/dt = 100 A/

µs,

180

QRR

Total diode charge

See Figures 1 and 14

180

resistive-load switching characteristics, TC = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

td(on)

Delay time, VGS↑ to VDS↓ turn on

194

td(off)

Delay time, VGS↓ to VDS↑ turn off

VDD = 25 V,

RL = 25 Ω,ten = 10 ns,

430

Rise time, VDS

tdis = 10 ns,

See Figure 2

Fall time, VDS

180

Total gate charge

V48 V

I1 A

V10 V

5.1

6.4

Qgs(th) Threshold gate-to-source charge

VDD = 48 V,

See Figure 3

ID = 1 A,

VGS = 10 V,

0.5

0.63

Qgd

Gate-to-drain charge

See Figure 3

2.75

3.4

Internal drain inductance

Internal source inductance

Internal gate resistance

500

Ω

thermal resistance

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

θJA

Junction-to-ambient thermal resistance

All outputs with equal power

θJC Junction-to-case thermal resistance

All outputs with equal power

°C/W

θJC Junction-to-case thermal resistance

One output dissipating power

TPIC2601 Datasheet(PDF) 3 Page - Texas Instruments

TPIC2601 Datasheet(HTML) 3 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL