TPS1100, TPS1100Y

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995

2

POST OFFICE BOX 655303

description (continued)

Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and

PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel

MOSFETs in SOIC packages.

TPS1100Y chip information

This chip, when properly assembled, displays characteristics similar to the TPS1100. Thermal compression or

ultrasonic bonding may be used on the doped aluminum bonding pads. The chips may be mounted with

conductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 MILS TYPICAL

BONDING PADS: 4

× 4 MILS MINIMUM

TJmax = 150°C

TOLERANCES ARE

±10%

ALL DIMENSIONS ARE IN MILS

57

64

TPS1100Y

(2)

(6)

(1)

(3)

(7)

(8)

(5)

(4)

DRAIN

SOURCE

SOURCE

SOURCE

GATE

DRAIN

DRAIN

DRAIN

(2)

(1)

(3)

(4)

(6)

(7)

(8)

(5)