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TPS1101Y Datasheet(PDF) 2 Page - Texas Instruments

Part # TPS1101Y
Description  SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
PDF  10 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TPS1101Y Datasheet(HTML) 2 Page - Texas Instruments

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TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
schematic
NOTE A: For all applications, all source terminals should be
connected and all drain terminals should be connected.
SOURCE
DRAIN
GATE
ESD-
Protection
Circuitry
TPS1101Y chip information
This chip, when properly assembled, displays characteristics similar to the TPS1101. Thermal compression or
ultrasonic bonding may be used on the doped aluminum bonding pads. The chips may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4
× 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE
±10%
ALL DIMENSIONS ARE IN MILS
80
92
TPS1100Y
(2)
(6)
(1)
(3)
(7)
(8)
(5)
(4)
DRAIN
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
(2)
(1)
(3)
(4)
(6)
(7)
(8)
(5)



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