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TPS2330 Datasheet(PDF) 13 Page - Texas Instruments |
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TPS2330 Datasheet(HTML) 13 Page - Texas Instruments |
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13 / 20 page ![]() TPS2330, TPS2331 SINGLE HOT SWAP POWER CONTROLLER WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING SLVS277A – MARCH 2000– REVISED APRIL 2000 13 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 APPLICATION INFORMATION typical application diagram This diagram shows a typical dual hot-swap application. The pullup resistors at PWRGD and Fault should be relatively large (e.g. 100 k Ω) to reduce power loss unless they are required to drive a large load. VREG 0.1 µF IN ISET RISET ISENSE RSENSE GATE DISCH VSENSE RVSENSE_TOP RVSENSE_BOTTOM + FAULT PWRGD FAULT PWRGD TIMER ENABLE DGND AGND VO ENABLE 1 µF ∼ 10 µF 3 V ∼ 13 V IN TPS2331 System Board Figure 18. Typical Hot-Swap Application input capacitor A 0.1- µF ceramic capacitor in parallel with a 1-µF ceramic capacitor should be placed on the input power terminals near the connector on the hot-plug board to help stabilize the voltage rails on the cards. The TPS2330/31 does not need to be mounted near the connector or these input capacitors. For applications with more severe power environments, a 2.2- µF or higher ceramic capacitor is recommended near the input terminals of the hot-plug board. A bypass capacitor for IN should be placed close to the device. output capacitor A 0.1- µF ceramic capacitor is recommended per load on the TPS2330/31; these capacitors should be placed close to the external FETs and to TPS2330/31. A larger bulk capacitor on the load is also recommended. The value of the bulk capacitor should be selected based on the power requirements and the transients generated by the application. external FET To deliver power from the input sources to the loads, the controller needs an external N-channel MOSFET. A few widely used MOSFETs are shown in Table 1. But many other MOSFETs on the market can also be used with TPS23xx in hot-swap systems. |
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