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VEC2801 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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VEC2801 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 6 page ![]() VEC2801 No.9078-2/6 Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID= --1mA, VGS=0 --12 V Zero-Gate Voltage Drain Current IDSS VDS= --12V, VGS=0 --1 μA Gate-to-Source Leakage Current IGSS VGS=±6.4V, VDS=0 ±10 μA Cutoff Voltage VGS(off) VDS= --6V, ID= --1mA --0.3 --1.3 V Forward Transfer Admittance ⏐yfs⏐ VDS= --6V, ID= --1.5A 4.2 6 S RDS(on)1 ID= --3A, VGS= --4.5V 47 62 mΩ Static Drain-to-Source On-State Resistance RDS(on)2 ID= --1.5A, VGS= --2.5V 64 89 mΩ RDS(on)3 ID= --0.3A, VGS= --1.8V 85 122 mΩ Input Capacitance Ciss VDS= --6V, f=1MHz 940 pF Output Capacitance Coss VDS= --6V, f=1MHz 230 pF Reverse Transfer Capacitance Crss VDS= --6V, f=1MHz 180 pF Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr See specified Test Circuit. 84 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 104 ns Fall Time tf See specified Test Circuit. 106 ns Total Gate Charge Qg VDS= --6V, VGS= --4.5V, ID= --3A 11 nC Gate-to-Source Charge Qgs VDS= --6V, VGS= --4.5V, ID= --3A 1.6 nC Gate-to-Drain “Miller” Charge Qgd VDS= --6V, VGS= --4.5V, ID= --3A 2.8 nC Diode Forward Voltage VSD IS= --3A, VGS=0 --0.85 --1.2 V [SBD] Reverse Voltage VR IR=1mA 15 V Forward Voltage VF IF=1A 0.35 0.45 V Reverse Current IR VR=6V 500 μA Interterminal Capacitance C VR=10V, f=1MHz 45 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 15 ns Thermal Resistance Rth(j-a) Mounted on a ceramic board (900mm2 ✕0.8mm) 70 °C / W Package Dimensions Electrical Connection unit : mm (typ) 7012-004 2.9 0.65 0.3 123 4 87 6 5 0.15 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 87 6 5 123 4 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Top view |
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