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TRF1500 Datasheet(PDF) 1 Page - Texas Instruments |
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TRF1500 Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 17 page ![]() TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041A – JANUARY 1998 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D Low-Noise Amplifier for Each Band D RF Mixer for Each Band With Image Rejection Configuration for High Band D IF Amplifier for Both Low and High Bands D Operates From a Supply Voltage Range of 3.6 V to 4 V D Suitable for Portable Dual-Band/Dual-Mode Cellular Telephones (IS136) D 48-Pin Plastic Thin Quad Flatpack Package (TQFP) description The TRF1500 is a dual-band/dual-mode personal communications system (PCS) receiver for cellular telephones operating dual mode (analog and digital) in the 800-MHz band and single mode (digital) in the 1900-MHz band. The TRF1500 consists of a low-noise amplifier (LNA) and mixer for each band. The high band uses an image rejection mixer for down conversion while the low band relies on an off-chip image rejection filter between the LNA and mixer. The local oscillator (LO) inputs additionally have buffered outputs that can be used in either single-ended or differential mode for a phase-locked-loop (PLL) configuration. A state is also available that allows the low-band LO to serve as the high-band LO through a mode-selectable frequency doubler. A wideband mixer is also available for transmit loop architectures commonly used in advanced mobile phone systems, global systems for mobile communications, and digital cellular systems. Power consumption is low and can be further reduced by operating the TRF1500 in sleep mode. Typical power consumption for each receiver function is shown in Table 1. The TRF1500 is available in a 48-pin plastic thin-quad flatpack package (TQFP) and is characterized for operation from –30 _C to 85 _C operating free-air temperature. Table 1. Typical Power Consumption at VCC = 3.75 V FUNCTION TYPICAL POWER UNIT Sleep mode 38 µW Low band 85 mW High band 190 mW Transmit mixer 50 mW Frequency doubler 12 mW These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Copyright © 1997, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. |
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