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ZXMS6004FF Datasheet(PDF) 3 Page - Diodes Incorporated

Part # ZXMS6004FF
Description  60V N-channel self protected enhancement mode Intellifet MOSFET
PDF  10 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMS6004FF Datasheet(HTML) 3 Page - Diodes Incorporated

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ZXMS6004FF
Issue 1 - December 2008
3
www.zetex.com
© Diodes Incorporated, 2008
www.diodes.com
Absolute maximum ratings
Thermal resistance
NOTES
(a) For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air
conditions.
(b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board in still air
conditions.
(c) Thermal resistance from junction to the mounting surface of the drain pin.
Parameter
Symbol
Limit
Unit
Continuous Drain-Source voltage
VDS
60
V
Drain-Source voltage for short circuit protection
VDS(SC)
36
V
Continuous input voltage
VIN
-0.5 ... +6
V
Continuous input current
-0.2V
≤V
IN≤6V
VIN<-0.2V or VIN>6V
IIN
No limit
│I
IN │≤2
mA
Operating temperature range
Tj,
-40 to +150
°C
Storage temperature range
Tstg
-55 to +150
°C
Power dissipation at TA =25°C (a)
Linear derating factor
PD
0.83
6.66
W
mW/°C
Power dissipation at TA =25°C (b)
Linear derating factor
PD
1.5
12.0
W
mW/°C
Pulsed drain current @ VIN=3.3V
IDM
2A
Pulsed drain current @ VIN=5V
IDM
2.5
A
Continuous source current (Body Diode) (a)
IS
1A
Pulsed dource current (Body Diode)
ISM
5A
Unclamped single pulse inductive energy,
Tj=25°C, ID=0.5A, VDD=24V
EAS
90
mJ
Electrostatic discharge (Human body model)
VESD
4000
V
Charged device model
VCDM
1000
V
Parameter
Symbo
Value
Unit
Junction to ambient (a)
RθJA
150
°C/W
Junction to ambient (b)
RθJA
83
°C/W
Junction to case (c)
RθJC
44
°C/W



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