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BD787 Datasheet(PDF) 2 Page - Motorola, Inc

Part # BD787
Description  Complementary Plastic Silicon Power Transistors
PDF  6 Pages
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

BD787 Datasheet(HTML) 2 Page - Motorola, Inc

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BD787 BD788
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
60
—
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
ICEO
—
100
µAdc
Collector Cutoff Current
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125°C)
ICEX
—
—
1.0
0.1
µAdc
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
—
1.0
µAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 200 mAdc, VCE = 3.0 Vdc)
(IC = 1.0 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
hFE
40
25
20
5.0
250
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 4.0 Adc, IB = 800 mAdc)
VCE(sat)
—
—
—
—
0.4
0.6
0.8
2.5
Vdc
Base–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
—
2.0
Vdc
Base–Emitter On Voltage
(IC = 2.0 Adc, VCE = 3.0 Vdc)
VBE(on)
—
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz)
fT
50
—
MHz
Output Capacitance
(VCB = 10 Vdc, IC = 0)
BD787
(f = 0.1 MHz)
BD788
Cob
—
—
50
70
pF
Small–Signal Current Gain
(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
10
—
—
* Indicates JEDEC Registered Data
(1) Pulse Test; Pulse Width
v 300 µs, Duty Cycle v 2.0%.
Figure 2. Switching Time Test Circuit
500
0.04
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
70
30
20
5.0
0.06
0.2
0.4
0.6
td @ VBE(off) = 5.0 V
VCC = 30 V
IC/IB = 10
TJ = 25°C
+ 11 V
0
+ 30 V
SCOPE
RB
– 4 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
tr
7.0
10
1.0
4.0
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
25
µs
– 9.0 V
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
BD787 (NPN)
BD788 (PNP)
300
200
100
50
0.1
2.0



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